elektronische bauelemente SSF2102 2.1a , 20v , r ds(on) 60 m ? n-channel enhancement mode power mosfet 14-jan-2014 rev.a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the SSF2102 provide the designer with the b est combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sot-323 p ackage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-323 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current i d 2.1 a continuous source-drain current(diode conduction) i s 0.6 a maximum power dissipation p d 200 mw thermal resistance from junction to ambient (t 5s) r ja 625 c / w operating junction & storage temperature t j , t stg 150, -55~150 c sot-323 ts2 top view top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 1.80 2.20 g 0.1 ref. b 1.80 2.45 h 0.525 ref. c 1.1 1.4 j 0.08 0.25 d 0.80 1.10 k 0.8 typ. e 1.20 1.40 l 0.65 typ. f 0.15 0.40
elektronische bauelemente SSF2102 2.1a , 20v , r ds(on) 60 m ? n-channel enhancement mode power mosfet 14-jan-2014 rev.a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 20 - - v v gs =0, i d =10 a gate-threshold voltage v gs(th) 0.65 0.95 1.2 v v ds =v gs , i d =50 a gate-source leakage current i gss - - 100 na v gs = 8v, v ds =0 drain-source leakage current i dss - - 1 a v ds =20v, v gs =0 forward transconductance 1 g fs - 8 - s v ds =5v, i d =3.6a diode forward voltage v sd - 0.76 1.2 v i s =0.94a, v gs =0 - 45 60 v gs =4.5v, i d =3.6a static drain-source on-resistance 1 r ds(on) - 70 115 m v gs =2.5v, i d =3.1a dynamic characteristics total gate charge q g - 4 - gate-source charge q gs - 0.65 - gate-drain change q gd - 1.5 - nc i d =3.6a v ds =10v v gs =4.5v input capacitance 2 c iss - 300 - output capacitance 2 c oss - 120 - reverse transfer capacitance 2 c rss - 80 - pf v gs =0 v ds =10v f =1.0mhz switching parameters turn-on delay time 2 t d(on) - 7 - rise time 2 t r - 55 - turn-off delay time 2 t d(off) - 16 - fall time 2 t f - 10 - ns v dd =10v v gen =4.5v r g =6 r l =5.5 i d =3.6a note: 1. pulse test : pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify.
|
